Description
Features
n PLANAR PROCESS
n 200 mW POWER DISSIPATION
Mechanical Dimensions
n INDUSTRY STANDARD SOT-23
PACKAGE
n MEETS UL SPECIFICATION 94V-0
Electrical Characteristics @ 25
O
C.
Maximum Ratings
Peak Reverse Voltage...V
RM
RMS Reverse Voltage...V
R(rms)
FMBBAS19...21
Data Sheet
200 mW EPITAXIAL
PLANAR DIODES
FMBBAS19...21
Units
Volts
Volts
Page 10-25
Average Forward Rectified Current...I
O
Non-Repetitive Peak Forward Surge Current...I
FSM
Forward Voltage...V
F
@ I
F
= 100 mA
DC Reverse Current...I
R
@ V
R
= 70V
Power Dissipation...P
D
Reverse Recovery Time...t
RR
Operating Temperature Range...T
J
Storage Temperature Range...T
STRG
............................................. 625 ...............................................
............................................. 2.5 ...............................................
............................................. 1.0 ...............................................
............................................. 0.1 ...............................................
............................................. 200 ...............................................
............................................. 5 0 ...............................................
......................................... -25 to 85 ..........................................
......................................... -65 to 150 ..........................................
mAmps
Amps
Volts
Amps
mW
nS
C
C
FMBBAS19
FMBBAS20
FMBBAS21
120
200
250
100
150
200
.110
.060
.037
.037
.115
.016
.043
.004
.016
1
2
3
Pin 2
Pin 3
Pin 1 NC
P
VV
= 100nS
Device Under T
Device Under T
Device Under T
Device Under T
Device Under Test
est
est
est
est
50 Ohms
5K Ohms
R
G
= 50 Ohms
.01 uF
I
F
Output
Trr
I
R
0.1 I
R
PDF 
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